doc. no : qw0905-l rev. : date : 11 - may - 2007 la08b/5e4y1h-pf a data sheet ligitek electronics co.,ltd. property of ligitek only led array la08b/5e4y1h-pf pb lead-free parts
note : 1.all dimension are in millimeter tolerance is 0.25mm unless otherwise noted. 2.specifications are subject to change without notice. lh5520-pf ly5520-pf le5520-pf 1/7 la08b/5e4y1h-pfpage part no. package dimensions ligitek electronics co.,ltd. property of ligitek only ee e eh ey 1.0min 2.3typ 12.5min 1.0min 2.3typ 0.5 typ 3.8 6.0 8.0 1.5max 5.3 2.0 1.8 - + 6.8x9=61.2 1.8 4.4 70.0 5.9 0.5 typ 7.9 2.0 12.5min 5.3 7.2 5.0 y y y + -
absolute maximum ratings at ta=25 la08b/5e4y1h-pf part no note : 1.the forward voltage data did not including 0.1v testing tolerance. 2. the luminous intensity data did not including 15% testing tolerance. typical electrical & optical characteristics (ta=25 ) forward current peak forward current duty 1/10@10khz operating temperature storage temperature reverse current @5v power dissipation peak wave length pnm material orange emitted 635 lens orange diffused color viewing angle 2 1/2 (deg) spectral halfwidth nm 20 luminous intensity @10ma(mcd) forward voltage @ ma(v) 1.8 min. 2.6 max. 45 1.7 min. typ. 3.0 142 tstg ir t opr -40 ~ +100 10 -40 ~ +85 a i f pd i fp parameter symbol ma 20 80 60 ma mw y ratings unit ligitek electronics co.,ltd. property of ligitek only 2/7 page gaasp/gap yellow diffused yellow585351.72.61.22.5142 gap red diffused red69790 1.72.6 0.51.5 142 30 100 120 e 15 40 60 h part no. la08b/5e4y1h-pf gaasp/gap
fig.3 forward voltage vs. temperature fig.5 relative intensity vs. wavelength ambient temperature( ) r e l a t i v e i n t e n s i t y @ 2 0 m a wavelength (nm) f o r w a r d v o l t a g e @ 2 0 m a n o r m a l i z e @ 2 5 fig.4 relative intensity vs. temperature ambient temperature( ) r e l a t i v e i n t e n s i t y @ 2 0 m a n o r m a l i z e @ 2 5 typical electro-optical characteristics curve forward voltage(v) fig.1 forward current vs. forward voltage f o r w a r d c u r r e n t ( m a ) forward current(ma) fig.2 relative intensity vs. forward current r e l a t i v e i n t e n s i t y n o r m a l i z e @ 2 0 m a ligitek electronics co.,ltd. property of ligitek only 1.0 0.1 1.0 10 100 1000 1.0101001000 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -40-200204060 1.0 1.1 1.2 550 600 0.0 0.5 1.0 2.03.04.05.0 80100 0.8 0.9 -20 -40 40 20 080100 60 2.0 0.0 0.5 1.0 1.5 2.5 3.0 650 700750 e chip page3/7 la08b/5e4y1h-pf part no.
3.0 2.5 1.5 1.0 0.5 0.0 2.0 fig.4 relative intensity vs. temperature 1.0 r e l a t i v e i n t e n s i t y @ 2 0 m a 550 wavelength (nm) 500 0.0 0.5 600650700 ambient temperature( ) fig.5 relative intensity vs. wavelength fig.3 forward voltage vs. temperature f o r w a r d v o l t a g e @ 2 0 m a n o r m a l i z e @ 2 5 -40 0.8 -20 1.0 0.9 1.1 1.2 r e l a t i v e i n t e n s i t y @ 2 0 m a n o r m a l i z e @ 2 5 40 20 060100 80 ambient temperature( ) -40-20 02060 40100 80 3.0 2.5 2.0 1.5 1.0 0.5 0.0 ligitek electronics co.,ltd. property of ligitek only fig.2 relative intensity vs. forward current typical electro-optical characteristics curve 2.0 fig.1 forward current vs. forward voltage forward voltage(v) 100 f o r w a r d c u r r e n t ( m a ) 1.0 0.1 10 1.0 y chip 1000 r e l a t i v e i n t e n s i t y n o r m a l i z e @ 2 0 m a 3.04.05.0 4/7 page forward current(ma) 1.0101001000 part no. la08b/5e4y1h-pf
1.5 r e l a t i v e i n t e n s i t y @ 2 0 m a n o r m a l i z e @ 2 5 f o r w a r d v o l t a g e @ 2 0 m a n o r m a l i z e @ 2 5 ambient temperature( ) 1000 900 800 700 600 wavelength (nm) fig.5 relative intensity vs. wavelength ambient temperature( ) r e l a t i v e i n t e n s i t y @ 2 0 m a 0.0 0.5 1.0 0.8 -40 0.9 -20020406080100-40 0.0 1.0 0.5 -20 80 40 20 060100 ligitek electronics co.,ltd. property of ligitek only fig.2 relative intensity vs. forward current forward current(ma) fig.4 relative intensity vs. temperature forward voltage(v) fig.3 forward voltage vs. temperature 1.1 1.0 1.2 f o r w a r d c u r r e n t ( m a ) 0.1 1.0 1.0 100 10 1000 2.03.0 2.0 3.0 2.5 r e l a t i v e i n t e n s i t y n o r m a l i z e @ 2 0 m a 4.05.01.0 0.0 0.5 1.0 2.0 1.5 3.0 2.5 typical electro-optical characteristics curve fig.1 forward current vs. forward voltage h chip 101001000 page5/7 part no. la08b/5e4y1h-pf
soldering condition(pb-free) 1.iron: soldering iron:30w max temperature 350 c max soldering time:3 seconds max(one time only) distance:2mm min(from solder joint to case) 2 /sec max 25 0 0 preheat 50 100 150 time(sec) dip soldering preheat: 120 c max preheat time: 60seconds max ramp-up 2 c/sec(max) ramp-down:-5 c/sec(max) solder bath:260 c max dipping time:3 seconds max distance:2mm min(from solder joint to case) temp( c) 120 260 2.wave soldering profile 5 /sec max 260 c3sec max ligitek electronics co.,ltd. property of ligitek only page 6/7 60 seconds max note:1.wave solder should not be made more than one time. 2.you can just only select one of the soldering conditions as above. part no. la08b/5e4y1h-pf
1.t.sol=230 5 2.dwell time=5 1sec 1.ta=105 5 &-40 5 (10min) (10min) 2.total 10 cycles 1.t.sol=260 5 2.dwell time= 10 1sec. 1.ta=65 5 2.rh=90%~95% 3.t=240hrs 2hrs 1.under room temperature 2.if=20ma 3.t=1000 hrs (-24hrs, +72hrs) 1.ta=-40 5 2.t=1000 hrs (-24hrs, +72hrs) 1.ta=105 5 2.t=1000 hrs (-24hrs, +72hrs) thermal shock test solderability test solder resistance test high temperature high humidity test low temperature storage test operating life test high temperature storage test test item the purpose of this is the resistance of the device to sudden extreme changes in high and low temperature. this test intended to see soldering well performed or not. this test intended to determine the thermal characteristic resistance of the device to sudden exposures at extreme changes in temperature when soldering the lead wire. the purpose of this test is the resistance of the device under tropical for hours. this test is conducted for the purpose of detemining the resistance of a part in electrical and themal stressed. the purpose of this is the resistance of the device which is laid under condition of high temperature for hours. the purpose of this is the resistance of the device which is laid under condition of low temperature for hours. test condition description mil-std-202: 107d mil-std-750: 1051 mil-std-883: 1011 mil-std-202: 208d mil-std-750: 2026 mil-std-883: 2003 jis c 7021: a-2 mil-std-202: 210a mil-std-750: 2031 jis c 7021: a-1 mil-std-202:103b jis c 7021: b-11 jis c 7021: b-12 mil-std-750: 1026 mil-std-883: 1005 jis c 7021: b-1 mil-std-883:1008 jis c 7021: b-10 reference standard ligitek electronics co.,ltd. property of ligitek only reliability test: 7/7 page part no. la08b/5e4y1h-pf
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